Enhancing radiation resistance of silicon carbide power semiconductors for space applications

A analysis crew led by Dr. Jae Hwa Website positioning at Superior Semiconductor Analysis Middle of KERI has developed know-how to guage radiation resistance and safe reliability of silicon carbide (SiC) power semiconductor units in space atmosphere. The examine is revealed within the journal Radiation Physics and Chemistry.

Power semiconductors are important elements of electrical and digital units, regulating present move and enabling power conversion, very like muscle groups management motion within the human physique. Whereas silicon (Si) is at present essentially the most broadly used materials for power semiconductors in electrical automobiles and space environments, vast bandgap (WBG) power semiconductors equivalent to silicon carbide (SiC) and diamond, which supply larger efficiency and sturdiness, are gaining important consideration as superior alternate options.

Space radiation is taken into account a serious trigger of extreme degradation within the electrical traits of power semiconductors put in in plane, exploration automobiles (rovers), and satellites. Whereas radiation impact analysis is actively performed in the US and Europe, Korea’s efforts have primarily targeted on the quantitative evaluation of radiation resistance in silicon power semiconductors, with restricted analysis outcomes.

KERI has efficiently developed know-how to successfully consider the radiation resistance of SiC power semiconductors via Korea’s first high-energy space atmosphere simulation. Probably the most essential facet was creating an excessive space radiation experimental atmosphere. Space radiation includes particles of various vitality ranges, with protons making up 80–90% of the overall composition.

Dr. Website positioning’s crew utilized high-energy protons (100 MeV) from the accelerator facility on the Korea Atomic Vitality Analysis Institute, and collaborated with the crew led by Professor Yoon Younger-jun from Andong Nationwide College, specialists within the discipline, to implement exact radiation publicity circumstances.

Underneath these space atmosphere circumstances, KERI systematically analyzed the consequences on domestically developed SiC power semiconductors, together with voltage modifications, elevated leakage present because of publicity, and lattice injury. Utilizing the accrued information, the crew formulated design standards to make sure the long-term reliability of SiC power semiconductors for space applications.

Dr. Jae Hwa Website positioning of KERI acknowledged, “Setting varied radiation impact parameters and testing core elements in equally simulated environments is taken into account a key space trade know-how worldwide,” including that “this know-how can be utilized throughout varied fields together with aerospace, medical radiation gear, nuclear power vegetation, radiation waste remedy services, and navy/protection electronics.”

The analysis crew plans to increase the know-how’s scope by pursuing reliability evaluations of SiC power semiconductors beneath ultra-high vitality (over 200MeV) radiation circumstances and creating superior radiation-resistant power semiconductors. Moreover, they’re conducting analysis on future power semiconductors utilizing diamond, which has the most effective semiconductor properties on Earth, in collaboration with Gyeongnam Province and Japanese firm Orbray. Their aim is to contribute to Korea’s growth in high-value-added aerospace industries.